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STPSC8H065G2Y-TR

Part No STPSC8H065G2Y-TR
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 44 Weeks
Features Diode Silicon Carbide Schottky 650 V 8A Surface Mount D2PAK HV
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, ECOPACK®2
Package Reel - TR
Speed No Recovery Time > 500mA (Io)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK HV
Family Name STPSC8
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number 497-18399-1, 497-18399-2, 497-18399-6
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898429-STPSC8H065G2Y-TR
Ultra Librarian 3D Model Ultra Librarian STPSC8H065G2Y-TR CAD Model

Description

STPSC8H065G2Y-TR - Silicon Carbide Power Schottky Diode by STMicroelectronics

The STPSC8H065G2Y-TR is a robust and high-performance silicon carbide (SiC) power Schottky diode, designed by STMicroelectronics, a leader in semiconductor solutions. This diode is part of the automotive-grade product line that is AEC-Q101 qualified, making it ideal for high-reliability applications in automotive, industrial, and high-efficiency power management systems.

Featuring a 650V voltage rating and a 8A forward current capacity, the STPSC8H065G2Y-TR is engineered to provide reduced power losses and higher efficiency in your power conversion systems. The use of silicon carbide as the material allows for superior thermal performance and lower switching losses compared to traditional silicon diodes. This is due to SiC's inherent material properties, such as a wider bandgap, higher breakdown field, and better thermal conductivity.

The STPSC8H065G2Y-TR comes in a surface-mount TO-247 package, which ensures excellent power handling capability and is suitable for high-power density applications. The package is designed to optimize the thermal transfer and maximize reliability and longevity of the device under various operating conditions.

This power diode features a no-reverse recovery charge (Qrr) and no forward recovery, which is essential for applications requiring high switching frequencies. The result is reduced electromagnetic interference (EMI) and improved efficiency in switch-mode power supplies (SMPS), inverters, and other power conversion applications.

Moreover, the STPSC8H065G2Y-TR is optimized for operation in extreme environments, offering a junction temperature range from -40°C to +175°C. This wide temperature range ensures stable performance across various temperature extremes, making it an excellent choice for automotive powertrain systems, on-board chargers, and other challenging environments.

In summary, the STPSC8H065G2Y-TR silicon carbide power Schottky diode is a cutting-edge solution for designers looking to enhance efficiency, reliability, and thermal management in their power conversion applications. Its automotive-grade certification and robust package make it a dependable and high-performing component in the most demanding situations.

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