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STGWA60V60DF

Part No STGWA60V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT BIPO 600V 60A TO247-3 / IGBT Trench Field Stop 600 V 80 A 375 W Through Hole TO-247 Long Leads
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Power - Max 375 W
Switching Energy 750µJ (on), 550µJ (off)
Input Type Standard
Gate Charge 334 nC
Td (on/off) @ 25°C 60ns/208ns
Test Condition 400V, 60A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 74 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1025004-STGWA60V60DF
Ultra Librarian 3D Model Ultra Librarian STGWA60V60DF CAD Model

Description

STGWA60V60DF - STMicroelectronics Power MOSFET

The STGWA60V60DF is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This robust device is engineered to deliver high efficiency and reliability in a wide range of power conversion and management applications. Thanks to its advanced technology and design, the STGWA60V60DF is an excellent choice for designers looking to optimize their systems for better performance and energy savings.

Constructed with STMicroelectronics' innovative MDmesh™ DM2 technology, the STGWA60V60DF boasts extremely low on-resistance (RDS(on)) and reduced gate charge (Qg), which translates into superior switching performance and lower conduction losses. This power MOSFET is capable of handling a maximum continuous drain current (ID) of 60A, making it suitable for high-power applications.

With a drain-source voltage (VDS) of 600V, the STGWA60V60DF provides a generous safety margin for electrical devices operating at high voltages. This feature, combined with its high dv/dt capability, ensures safe and reliable operation even under harsh conditions. The device's fast recovery diode further enhances its performance by minimizing reverse-recovery time and reducing switching losses.

The STGWA60V60DF comes in a TO-247 long leads package, which is known for its excellent thermal characteristics. This package allows for efficient heat dissipation, ensuring the MOSFET operates within its specified temperature range, thus prolonging its lifespan and maintaining consistent performance over time.

Applications for the STGWA60V60DF are diverse and include high-efficiency converters, welding equipment, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and motor drives. Its robustness and reliability also make it an ideal choice for renewable energy applications such as solar inverters and wind turbine converters.

Overall, the STGWA60V60DF from STMicroelectronics represents a powerful solution for engineers and designers looking to enhance the efficiency, reliability, and thermal management of their power systems. Its cutting-edge technology and strong performance parameters make it a top contender in the field of power MOSFETs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5081 $59.6377
41+ $2.8785 $118.0185
63+ $2.7886 $175.6818
86+ $2.6985 $232.0710
111+ $2.6087 $289.5657
149+ $2.3388 $348.4812
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 351 pieces
In Stock: 336 pieces Factory Stock: 15 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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