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STGWA35HF60WDI

Part No STGWA35HF60WDI
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 70 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 260 W
Switching Energy 185µJ (off)
Input Type Standard
Gate Charge 140 nC
Td (on/off) @ 25°C 30ns/175ns
Test Condition 390V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 85 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA35
Other Names -497-10989-5,497-10989-5,STGWA35HF60WDI
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277385-STGWA35HF60WDI
Ultra Librarian 3D Model Ultra Librarian STGWA35HF60WDI CAD Model

Description

STGWA35HF60WDI - A Robust IGBT Module from STMicroelectronics

The STGWA35HF60WDI is an advanced Insulated Gate Bipolar Transistor (IGBT) module designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This high-performance module is specifically engineered to cater to the demanding needs of modern power electronics applications.

The STGWA35HF60WDI module features a half-bridge configuration with a maximum collector current of 35 A and a collector-emitter voltage of 600 V, making it an ideal choice for applications requiring efficient power conversion and control. Its robust design ensures high thermal performance and low conduction and switching losses, which are essential for energy-saving in power applications.

One of the key benefits of the STGWA35HF60WDI is its co-packaged freewheeling diode, which provides fast recovery and reduced electromagnetic interference (EMI). This characteristic is particularly important in applications where noise reduction and efficiency are critical, such as motor drives, renewable energy inverters, and power supplies.

The module's enhanced ruggedness is attributed to STMicroelectronics' state-of-the-art trench gate field-stop technology. This technology provides improved performance in terms of switching speed and thermal resistance, enabling the module to operate reliably even under harsh conditions. Additionally, the module's low gate charge and plateau voltage contribute to its ease of drive and overall system simplicity.

For design flexibility, the STGWA35HF60WDI comes in a compact and insulated package, which simplifies the assembly process and reduces the footprint on the printed circuit board (PCB). This package is optimized for excellent electrical isolation and mechanical durability, ensuring a long operational lifespan even in applications that are subject to vibrations and mechanical stress.

Overall, the STGWA35HF60WDI from STMicroelectronics represents a high-quality, efficient solution for designers looking to improve the performance and reliability of their power electronic systems. Its combination of advanced features and robust design makes it a versatile component suitable for a broad range of industrial and commercial applications.

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