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STGW60H65FB

Part No STGW60H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 375W TO247 / IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A
Power - Max 375 W
Switching Energy 1.09mJ (on), 626µJ (off)
Input Type Standard
Gate Charge 306 nC
Td (on/off) @ 25°C 51ns/160ns
Test Condition 400V, 60A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number STGW60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-14037-5,497-14037-5
Standard Package 30
Win Source Part Number 1096886-STGW60H65FB
Ultra Librarian 3D Model Ultra Librarian STGW60H65FB CAD Model

Description

The STGW60H65FB is a cutting-edge power transistor from STMicroelectronics, designed to meet the demanding requirements of modern high-efficiency applications. This 650V, 60A device belongs to the STPOWER family, which is renowned for its superior performance in power conversion and management. The STGW60H65FB is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) that offers an optimal trade-off between switching performance and on-state behavior, making it an excellent choice for a wide range of power applications.

Key Features

  • Voltage Rating: This device is rated for a breakdown voltage of 650V, providing a comfortable margin for applications requiring high voltage capabilities.
  • Current Capacity: With a continuous collector current of 60A at 25°C, the STGW60H65FB is capable of handling significant power levels, making it suitable for robust power conversion systems.
  • Low On-Resistance: The low on-state voltage drop (VCE(sat)) minimizes conduction losses and improves overall efficiency, which is critical for energy-sensitive designs.
  • High-Speed Switching: The fast switching characteristics of the STGW60H65FB enable high-frequency operation, reducing the size of passive components and the overall footprint of power modules.
  • Robustness: The device is designed with a ruggedized structure that ensures reliable operation even under harsh conditions, including high surge current capability.
  • Co-Packaged Diode: The inclusion of a co-packaged free-wheeling diode further enhances performance by providing a fast and soft recovery, which is essential for minimizing electromagnetic interference (EMI) and increasing efficiency.

Applications

The STGW60H65FB is versatile and can be used in a range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Solar Inverters
  • Induction Heating Systems
  • High-Frequency Converters

This IGBT is a testament to STMicroelectronics' commitment to providing high-quality, reliable components for advanced electronic systems. The STGW60H65FB is an excellent choice for designers looking to optimize their power management solutions with a component that offers both high performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.6235 $57.9760
39+ $2.9732 $115.9548
61+ $2.8803 $175.6983
83+ $2.7874 $231.3542
108+ $2.6944 $290.9952
144+ $2.4157 $347.8608
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 126 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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