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STGB30M65DF2

Part No STGB30M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 30A D2PAK / IGBT Trench Field Stop 650 V 60 A 258 W Surface Mount D²PAK (TO-263)
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 258 W
Switching Energy 300µJ (on), 960µJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 31.6ns/115ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names -497-15843-2,-497-15843-6,497-15843-6,497-15843-1,497-15843-2,-497-15843-1
Standard Package 1,000
Win Source Part Number 962241-STGB30M65DF2
Ultra Librarian 3D Model Ultra Librarian STGB30M65DF2 CAD Model

Description

The STGB30M65DF2 is a high-performance, 650V, 30A power transistor from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This advanced trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) is part of STMicroelectronics' well-regarded semiconductor lineup and is engineered to provide an optimal solution for high-power switching applications.

Key Features

  • High Voltage Capability: With a collector-emitter voltage (VCE) of 650V, the STGB30M65DF2 can handle high voltage operations, making it suitable for industrial, automotive, and energy applications.
  • High Current Rating: The device is capable of conducting up to 30A, which allows it to drive high-power circuits with ease.
  • Low On-State Voltage: The transistor's low VCE(sat) minimizes conduction losses and improves overall efficiency, particularly in hard-switching applications.
  • Fast Switching Speed: The STGB30M65DF2 is designed for fast switching, reducing switching losses and enabling high-frequency operation.
  • Robustness: This IGBT is built to withstand rugged operational conditions, ensuring reliability and a long operational lifespan.

Applications

The STGB30M65DF2 is versatile and can be used in a variety of applications, including:

  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • Induction heating
  • Power factor correction circuits

Advanced Technology

STMicroelectronics has integrated cutting-edge technology into the STGB30M65DF2 to ensure high performance. The device features a trench gate field-stop structure that provides lower VCE(sat) and faster switching, which are critical for reducing power losses in high-frequency operations. The structure also enhances the device's robustness against over-voltage conditions.

Energy Efficiency

Energy efficiency is a critical factor in power device selection, and the STGB30M65DF2 excels in this area. Its low on-state voltage and fast switching capabilities enable systems to operate with higher efficiency, leading to energy savings and reduced thermal management requirements.

Conclusion

The STGB30M65DF2 from STMicroelectronics represents a blend of performance, efficiency, and reliability. Its high voltage and current capabilities, combined with low loss characteristics, make it an ideal choice for designers looking to optimize their power electronic systems. Whether for renewable energy applications, motor control, or power management, this IGBT can help achieve higher performance and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6515 $57.8025
75+ $1.3551 $101.6325
115+ $1.3128 $150.9720
160+ $1.2704 $203.2640
205+ $1.2281 $251.7605
275+ $1.1010 $302.7750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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