STFI180N10F3 - N-channel 100V - 0.0035 ohm - 180A - TO-220FP STripFET™ III Power MOSFET

The STFI180N10F3 is a state-of-the-art N-channel Power MOSFET, designed and manufactured by STMicroelectronics, utilizing the advanced STripFET™ III technology. This device offers an excellent combination of low on-resistance, high current capability, and high switching speeds, making it suitable for a wide range of high-efficiency applications.

With a drain-source voltage (V_DS) of 100V, the STFI180N10F3 is well-suited for high voltage applications. The device's low on-state resistance (R_DS(on)) of just 0.0035 ohm minimizes conduction losses, which is crucial for improving overall system efficiency, especially in high current scenarios. Its impressive continuous drain current (I_D) of 180A demonstrates the MOSFET's capability to handle substantial power without compromising performance.

The STFI180N10F3 comes in a fully isolated TO-220FP package, which not only ensures ease of mounting on a heatsink but also provides excellent thermal performance. This package feature makes the MOSFET a perfect choice for applications where electrical isolation is required between the device and the heatsink, such as in motor drives, DC-DC & DC-AC converters, and power management systems.

Featuring fast switching characteristics, the STFI180N10F3 is also an excellent choice for high-speed switching applications. This attribute, combined with the low gate charge (Q_G), results in reduced switching losses, further enhancing the efficiency of applications where the MOSFET is implemented.

STMicroelectronics has designed the STFI180N10F3 with robustness in mind. The device offers high avalanche ruggedness, which ensures reliability and longevity even under conditions where the MOSFET is subjected to high energy pulses in the avalanche and commutation modes.

In summary, the STFI180N10F3 by STMicroelectronics is a high-performance Power MOSFET that is ideal for a variety of power applications. Its combination of low on-resistance, high current capability, fast switching speeds, and robustness make it a versatile and reliable component for any power electronic system designer's toolkit.