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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 150mOhm at 11.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 62.5nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 2090pF at 100V
Power Dissipation (Maximum) 35W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260963-STF28NM60ND
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF28NM60ND CAD Model

Description

STF28NM60ND - Power MOSFET from STMicroelectronics

The STF28NM60ND is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is part of the MDmesh™ DK5 product line, which is renowned for its excellent energy efficiency and high power density. The device is specifically engineered to address the demanding requirements of high-efficiency power conversion applications.

With an advanced silicon technology, the STF28NM60ND offers a very low on-resistance (R<sub>DS(on)) of only 0.085 Ω, which significantly reduces conduction losses. The device operates at a maximum voltage of 600V, making it suitable for high-voltage applications. The MOSFET is capable of handling continuous currents up to 22A, ensuring robust performance for a wide range of power electronics designs.

The STF28NM60ND features a fast recovery diode, which is optimized for high-frequency switching. This characteristic is particularly beneficial in resonant and soft-switching circuits where switching speed is crucial. The device's low gate charge (Q<sub>g) and low input capacitance (C<sub>iss) contribute to reduced switching losses, further enhancing overall system efficiency.

Designed with STMicroelectronics' state-of-the-art technology, the STF28NM60ND is housed in a TO-220FP package, which offers excellent thermal performance and is suitable for through-hole mounting. This package design ensures easy integration into various circuit boards and robust mechanical endurance. The device also features a 100% avalanche tested design, which guarantees reliability and longevity even under harsh operating conditions.

Applications for the STF28NM60ND include a broad range of power supply circuits, such as switch mode power supplies (SMPS), LED lighting, high-efficiency DC-DC converters, and motor control systems. Its superior electrical characteristics make it an ideal choice for designers looking to optimize their power management solutions for energy savings and high-power density.

In summary, the STF28NM60ND from STMicroelectronics is a high-voltage, high-efficiency Power MOSFET that delivers exceptional performance for advanced power conversion applications. Its robust design and energy-saving features make it a go-to component for engineers seeking to develop cutting-edge electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.1306 $67.8360
140+ $0.9275 $129.8500
220+ $0.8990 $197.7800
300+ $0.8693 $260.7900
385+ $0.8409 $323.7465
515+ $0.7542 $388.4130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 18,000 pieces
MOQ: 60 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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