Introducing the STF24N65M2 Power MOSFET from STMicroelectronics

The STF24N65M2 is a state-of-the-art MDmesh™ II Plus low Qg Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance MOSFET is part of ST's N-channel series and is tailored for applications that demand high efficiency and power density.

Key Features

• Voltage Capability: The STF24N65M2 boasts a robust drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
• Low On-Resistance: With an on-resistance (R_DS(on)) of just 0.190 Ω, this MOSFET ensures minimal conduction losses and is optimized for improved efficiency.
• Reduced Gate Charge: A low gate charge (Qg) is a significant advantage, reducing switching losses and enabling faster switching performance.
• High Current Capacity: The device can handle a continuous drain current (I_D) of up to 18 A, providing ample current for a wide range of power applications.

Advanced Technology

The STF24N65M2 utilizes the innovative MDmesh™ II Plus technology, which combines the benefits of reduced on-resistance and lower gate charge to achieve superior switching performance and energy efficiency. This technology is particularly well-suited for resonant and hard-switching topologies.

Applications

With its high efficiency and power-handling capabilities, the STF24N65M2 is ideal for a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction Circuits

Package and Environmental Compliance

The STF24N65M2 is offered in a TO-220FP package, known for its robustness and excellent thermal performance. STMicroelectronics is committed to environmental sustainability, and this product complies with the European Union’s RoHS directive, ensuring it is free from hazardous substances.

In summary, the STF24N65M2 from STMicroelectronics represents a powerful solution for designers looking to optimize their power conversion systems with a reliable, high-performance MOSFET.