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STD7NM50N

Part No STD7NM50N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET | MOSFET N-CH 500V 5A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 780mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 400pF at 50V
Power Dissipation (Maximum) 45W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260899-STD7NM50N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD7NM50N CAD Model

Description

Product Overview: STD7NM50N - STMicroelectronics

The STD7NM50N is a state-of-the-art N-channel 500 V, 7 A MDmesh™ DM2 Power MOSFET from STMicroelectronics, renowned for its exceptional efficiency and performance in a wide range of applications. This advanced MOSFET is designed using ST's second generation of MDmesh technology, which combines the benefits of reduced on-resistance and high dv/dt capability with an enhanced body diode ruggedness, making it an ideal choice for high-efficiency power conversion and switching applications.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall efficiency.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 500 V, the STD7NM50N can comfortably handle high voltage applications, providing a wide safety margin for electrical designs.
  • High Current Capacity: The MOSFET is capable of conducting up to 7 A, making it suitable for high current operations.
  • Fast Switching Speed: The fast switching characteristics of the STD7NM50N ensure minimal switching losses and are beneficial for high-frequency circuits.
  • Improved dv/dt Capability: The robust design allows for high dv/dt handling, ensuring stable operation under fast voltage transients.
  • Enhanced Body Diode Ruggedness: The MDmesh DM2 technology provides a strong and reliable body diode, which is crucial for handling reverse recovery in applications such as motor control.
  • 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, guaranteeing reliability under extreme conditions.

Applications

The versatility of the STD7NM50N makes it suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Motor Control
  • Power Management Functions
  • Power Factor Correction (PFC) Circuits

With its superior electrical characteristics and thermal performance, the STD7NM50N from STMicroelectronics is a top choice for designers looking to improve efficiency and reliability in their power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4759 $59.0360
100+ $1.2111 $121.1100
150+ $1.1732 $175.9800
205+ $1.1354 $232.7570
265+ $1.0975 $290.8375
355+ $0.9840 $349.3200
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Availability: 7,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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