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STD2N80K5

Part No STD2N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Ultra low gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH5
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 3nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 95pF @ 100V
Vgs (Maximum) 30V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 4.5 Ohm @ 1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package DPAK
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1260811-STD2N80K5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STD2N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STD2N80K5 CAD Model

Description

Product Overview: STD2N80K5 - STMicroelectronics

The STD2N80K5 is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of the MDmesh™ K5 series, which is renowned for its high efficiency and reliability in a wide range of applications. The STD2N80K5 MOSFET is specifically engineered to address the rigorous demands of high-performance switching applications.

Boasting a drain-source voltage (VDS) of 800V, this MOSFET can handle high voltage operations with ease, making it ideal for applications such as switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters. The STD2N80K5 offers a continuous drain current (ID) of 4A at 25°C, ensuring that it can manage significant power without compromising performance.

One of the standout features of the STD2N80K5 is its low gate charge (Qg), which translates to reduced switching losses. This characteristic, combined with a low on-resistance (RDS(on)), maximizes the efficiency of the device, thus enabling energy-saving solutions for power management challenges. The low threshold voltage (VGS(th)) also contributes to the ease of driving the MOSFET, further enhancing its overall efficiency.

The STD2N80K5 is housed in a TO-252 (DPAK) package, which is known for its compact size and excellent thermal performance. This packaging allows for efficient heat dissipation and space-saving PCB design, which is crucial for modern electronic devices where real estate is at a premium.

In terms of protection features, the STD2N80K5 is equipped with 100% avalanche tested ruggedness, ensuring that it can withstand harsh operating conditions. This robustness, along with the high dV/dt capability, makes the MOSFET a reliable choice for designers looking to create durable and long-lasting electronic systems.

Overall, the STD2N80K5 from STMicroelectronics is a high-performance power MOSFET that offers an optimal balance between efficiency and ruggedness. Its advanced technology and features make it a go-to component for engineers who require a reliable and efficient power switching solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9827 $54.0485
125+ $0.8064 $100.8000
195+ $0.7812 $152.3340
265+ $0.7560 $200.3400
345+ $0.7308 $252.1260
460+ $0.6552 $301.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,674 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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