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STB6NM60N

Part No STB6NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Low input capacitance and gate charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 420pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 920 mOhm @ 2.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260686-STB6NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STB6NM60N
Introduction Date May 09, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STB6NM60N CAD Model

Description

STB6NM60N - N-channel 600V - 1.2 Ohm - 6A - D²PAK - TO-220/TO-220FP MDmesh™ II Power MOSFET

The STB6NM60N is a cutting-edge N-channel Power MOSFET from STMicroelectronics, designed to offer high efficiency and power density for a wide range of applications. This device is part of the MDmesh™ II series, which is renowned for its excellent on-state resistance and switching performance, thanks to a revolutionary vertical structure. The STB6NM60N is tailored to meet the stringent requirements of high-performance switching applications.

With a maximum drain-source voltage (VDS) of 600V, this MOSFET is well-suited for high voltage operations, providing a robust platform for designers to work with. The device boasts a low on-state resistance (RDS(on)) of just 1.2 Ohm, which minimizes conduction losses, enhancing overall efficiency. The STB6NM60N can handle a continuous drain current (ID) of up to 6A, making it capable of driving moderate power loads with ease.

The STB6NM60N is available in multiple package options, including D²PAK and TO-220/TO-220FP. These packages are widely recognized for their ability to handle high power and thermal performance, ensuring reliability in a compact form factor. The device also features a fast recovery diode, which is crucial for high-speed switching and further contributes to the reduction of power losses.

Designed with STMicroelectronics' state-of-the-art technology, the STB6NM60N is optimized for high-efficiency power supplies, lighting applications, including electronic ballasts, and a variety of inverter circuits. Its robustness and durability make it an ideal choice for industrial applications, such as motor drives and solar inverters, where reliability is paramount.

Overall, the STB6NM60N from STMicroelectronics represents a sophisticated solution for engineers looking to enhance the performance of their power management systems. Its low on-resistance, high voltage capability, and versatile packaging options make it a versatile component for a diverse range of high-efficiency applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8154 $59.1234
50+ $2.3100 $115.5000
78+ $2.2379 $174.5562
107+ $2.1656 $231.7192
138+ $2.0935 $288.9030
185+ $1.8769 $347.2265
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Availability: 991 pieces
MOQ: 21 pcs
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