STB60NE03L-12 - N-Channel MOSFET by STMicroelectronics

The STB60NE03L-12 is a robust N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is engineered to meet a wide range of requirements for high efficiency and reliability in power switching applications.

Key Features

• Low Gate Charge: This device is designed to have a low gate charge (Qg), which reduces the power required to drive the transistor, leading to increased efficiency in high-frequency switching applications.
• High Current Capability: With a continuous drain current (ID) of 60A, the STB60NE03L-12 can handle high current loads, making it suitable for demanding power supply and motor control applications.
• Low On-Resistance: The low on-state resistance (RDS(on)) of this MOSFET minimizes conduction losses and allows for higher efficiency in power conversion.
• 100% Avalanche Tested: Ensuring reliability and performance under extreme conditions, each unit is tested for avalanche energy capability.
• Application Versatility: Suitable for a broad range of applications, including DC-DC converters, motor drivers, and general-purpose switching.

Product Specifications

Parameter Value VDSS (Drain-Source Breakdown Voltage) 30V ID (Continuous Drain Current) 60A RDS(on) (Static Drain-Source On-Resistance) 0.012Ω Qg (Total Gate Charge) 120nC

The STB60NE03L-12 is packaged in a D2PAK, which is suitable for use in surface-mount technology (SMT) and provides excellent thermal performance. Its robust design and high-quality construction make it a reliable choice for engineers and designers looking to optimize their power management systems.

With its combination of efficiency, power handling, and thermal performance, the STB60NE03L-12 by STMicroelectronics is an outstanding component for anyone in need of a high-performance N-channel MOSFET.