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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series *
Package Tape & Reel
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB47
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-18150-6,-1138-STB47N60DM6AGDKR,497-18150-2-ND,-1138-STB47N60DM6AGCT,497-STB47N60DM6AGDKR,497-STB47N60DM6AGCT,497-18150-2,497-18150-1,497-STB47N60DM6AGTR,-1138-STB47N60DM6AGTR,497-18150-1-ND,497-18150-6-ND
Standard Package 1,000
Win Source Part Number 1096707-STB47N60DM6AG
Ultra Librarian 3D Model Ultra Librarian STB47N60DM6AG CAD Model

Description

STB47N60DM6AG - High-Efficiency Power MOSFET by STMicroelectronics

The STB47N60DM6AG is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of STMicroelectronics' MDmesh™ DM6 fast-recovery diode series, which is renowned for its high efficiency and performance in a wide range of applications, including switching power supplies, power converters, and motor control systems.

Key Features:

  • Advanced MDmesh™ DM6 Technology: The STB47N60DM6AG utilizes the latest MDmesh DM6 technology, which combines a fast-recovery diode with the company's innovative super-junction MOSFET design. This integration results in reduced switching losses, lower on-resistance (R<sub>DS(on)), and improved overall efficiency.
  • High Voltage Capability: With a breakdown voltage of 600V, this MOSFET is well-suited for high-voltage applications, providing a robust and reliable solution for designers.
  • Low On-Resistance: The device boasts an exceptionally low on-resistance of only 0.047 Ohms, contributing to reduced conduction losses and improved power efficiency in electronic circuits.
  • High Current Rating: The STB47N60DM6AG is capable of supporting a continuous drain current of up to 47A, making it ideal for handling high current loads.
  • Reduced Gate Charge: A low gate charge minimizes the energy required to turn the MOSFET on and off, which in turn reduces the power dissipation and improves the switching performance.
  • Enhanced Body Diode: The fast-recovery body diode ensures swift recovery times, which is crucial for high-frequency applications and reduces the risk of electromagnetic interference (EMI).
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and durability even under extreme conditions.

Applications:

The versatility of the STB47N60DM6AG makes it suitable for a broad spectrum of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • DC-DC Converters
  • Power Factor Correction Circuits
  • Motor Control Circuits
  • High-Efficiency Power Management Solutions

With its combination of high-performance features and robust design, the STB47N60DM6AG from STMicroelectronics represents an excellent choice for engineers and designers seeking to improve the efficiency, reliability, and thermal management of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6501 $57.7535
85+ $1.3539 $115.0815
130+ $1.3116 $170.5080
180+ $1.2693 $228.4740
230+ $1.2270 $282.2100
310+ $1.1001 $341.0310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 25,000 pieces
MOQ: 35 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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