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WFP13N50

Part No WFP13N50
Manufacturer Shenzhen Winsemi Microelectronics Co., Ltd
Catalog Electronic Wholesale
Description Silicon N-Channel MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Shenzhen Winsemi Microelectronics Co., Ltd
Win Source Part Number 1280334-WFP13N50
Manufacturer Homepage www.winsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian WFP13N50 CAD Model

Description

The WFP13N50 is a high-voltage N-channel MOSFET manufactured by Shenzhen Winsemi Microelectronics Co., Ltd. It's designed for efficient power switching applications, commonly used in power supplies and motor control circuits. It boasts a high breakdown voltage and low on-resistance, making it a suitable choice for high-power applications where efficiency is crucial.

Applications:

  • Switch-mode power supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Uninterruptible power supplies (UPS)
  • Motor control circuits
  • Lighting ballasts

Features:

  • High breakdown voltage (500V): Withstands high voltage stress.
  • Low on-resistance (RDS(on)): Minimizes conduction losses.
  • Fast switching speed: Reduces switching losses.
  • Avalanche energy rated: Enhanced ruggedness.
  • High ruggedness: Provides reliable operation in harsh environments.

Benefits:

  • High efficiency: Low RDS(on) minimizes power dissipation, improving overall system efficiency.
  • Increased reliability: High breakdown voltage and avalanche rating enhance device robustness.
  • Reduced heat dissipation: Lower power losses translate to less heat generation, simplifying thermal management.
  • Simplified design: Fast switching speed simplifies the design of high-frequency power converters.
  • Cost-effective solution: Offers a balance of performance and cost for various power switching applications.

Additional Details:

The WFP13N50 is typically available in a TO-220 package. Its gate threshold voltage is generally around 3V. The maximum continuous drain current is approximately 13A, but this value may vary depending on the operating temperature and other conditions. Proper heat sinking is essential when using this MOSFET in high-power applications to ensure that it operates within its safe operating area. The datasheet provides detailed specifications on the gate charge, which is an important parameter for optimizing the gate drive circuit. It's designed to operate at relatively high frequencies. It's also important to consider the device's thermal resistance when designing the cooling system. Please refer to the manufacturer's datasheet for detailed technical specifications and application guidelines.

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