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K9F1G08U0F5IB0

Part No K9F1G08U0F5IB0
Manufacturer Samsung
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1024653-K9F1G08U0F5IB0
Categories OEM Parts(J-L)
Manufacturer Samsung
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian K9F1G08U0F5IB0 CAD Model

Description

The K9F1G08U0F5IB0 is a 1G-bit (128M x 8 bit) NAND Flash Memory device from Samsung. It is a non-volatile memory solution suitable for mass storage applications requiring high density and performance. This NAND Flash memory utilizes a reliable floating gate technology to store data, offering excellent endurance and data retention characteristics.

Applications

  • Solid State Drives (SSDs)
  • USB Flash Drives
  • Memory Cards (SD, microSD)
  • Embedded Systems
  • Digital Cameras
  • MP3 Players
  • Mobile Phones

Features

  • High Density: 1G-bit (128M x 8 bit) capacity.
  • Organization: x8 I/O interface.
  • Supply Voltage: 2.7V ~ 3.6V.
  • Page Size: (512 + 16) bytes.
  • Block Size: (32 pages + 1 spare page) bytes.
  • Program Time: Typically 200µs per page.
  • Erase Time: Typically 2ms per block.
  • Endurance: 100,000 Program/Erase Cycles (typical).
  • Data Retention: 10 years (typical).
  • Operating Temperature: -40°C to +85°C.
  • Package: 48-pin TSOP I.
  • Command/Address/Data Multiplexed I/O: Simplifies interface and reduces pin count.
  • Automatic Page Programming: Allows for efficient data writing.
  • Automatic Block Erasure: Allows for efficient block management.
  • Copy-Back Program: Enables fast data relocation.
  • Cache Program: Improves write performance.
  • Hardware Data Protection: Protects data during power loss.

Benefits

  • High Storage Capacity: Provides ample storage for various data types.
  • Fast Read/Write Speeds: Enables quick data access and transfer.
  • Non-Volatile Memory: Retains data even when power is off.
  • High Endurance: Withstands numerous program/erase cycles.
  • Compact Size: Suitable for space-constrained applications.
  • Low Power Consumption: Extends battery life in portable devices.
  • Cost-Effective: Provides a competitive storage solution.

Additional Details

The K9F1G08U0F5IB0 incorporates error correction code (ECC) to improve data reliability and integrity. It adheres to industry-standard NAND Flash memory protocols, ensuring compatibility with various controllers and systems. The device is designed for high-performance and high-density storage applications, making it a versatile solution for a wide range of consumer electronics and industrial devices. The TSOP packaging allows for easy integration into various PCB designs. Further details including timing diagrams, command sets, and reliability data are available in the official Samsung datasheet.

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