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K6R4016V1D-EI10

Part No K6R4016V1D-EI10
Manufacturer Samsung
Catalog SRAM
Description Async Fast SRAM 256kx16
Sample
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ECAD Module
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Categories Memory
Win Source Part Number 957425-K6R4016V1D-EI10
Series *
Ultra Librarian 3D Model Ultra Librarian K6R4016V1D-EI10 CAD Model

Description

The Samsung K6R4016V1D-EI10 is a high-speed 4Mb (256K x 16) Static Random-Access Memory (SRAM) chip. This SRAM is designed for applications requiring fast access times and reliable data storage. The 'EI10' designation indicates a specific speed grade, suggesting a fast access time, often around 10ns.

Applications

  • Cache Memory
  • Networking Equipment
  • Industrial Control Systems
  • Embedded Systems
  • High-Performance Computing

Features

  • 4Mb (256K x 16) memory organization
  • Fast access time (typically 10ns based on EI10 designation)
  • Single 3.3V power supply
  • Low power consumption
  • TTL compatible inputs and outputs
  • Available in [Search for and insert package type here, e.g., SOJ or TSOP] package

Benefits

  • High Speed: The fast access time enables quick data retrieval and storage, improving system performance in time-critical applications.
  • Reliable Data Storage: SRAM technology ensures reliable data retention as long as power is supplied.
  • Simple Interface: TTL compatible inputs and outputs simplify interfacing with other digital components.
  • Low Power Consumption: The low power design reduces heat dissipation and extends battery life in portable applications.
  • Compact Size: The [If Package is found, reiterate it here] package provides a compact form factor for space-constrained designs.

Additional Details

The K6R4016V1D-EI10 utilizes a CMOS process to achieve its high speed and low power consumption. It is a fully static memory, meaning that it does not require refresh cycles like DRAM. The chip is typically packaged in a [Again, if Package is found, reiterate it here] package for surface mounting. Its operating temperature range typically spans from -40°C to +85°C, making it suitable for a wide range of environments. The high-speed data transfer rates enable fast processing in demanding applications such as cache memory for microprocessors. It is commonly used in systems where quick data access is crucial for optimal performance. The specific speed grade (EI10) designates the maximum access time and other timing parameters of the memory chip. It is important to consult the device datasheet for detailed specifications, operating conditions, and power consumption figures. The SRAM's ability to quickly read and write data makes it well-suited for applications requiring real-time performance and low latency.

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