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Same model may have multiple batches, images only for reference.
K4T51163QI-HCE6000
Same model may have multiple batches, images only for reference.

K4T51163QI-HCE6000

Part No K4T51163QI-HCE6000
Manufacturer Samsung
Catalog RAM
Description DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA Tray
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Access Time 450 ps
Address Bus Width 15 b
Case / Package FBGA
Density 512 Mb
Max Frequency 667 MHz
Max Operating Temperature 95 °C
Max Supply Voltage 1.9 V
Min Operating Temperature 0 °C
Min Supply Voltage 1.7 V
Mount Surface Mount
Nominal Supply Current 115 mA
Number of Pins 84
Operating Supply Voltage 1.8 V
RoHS Compliant
Win Source Part Number 1231118-K4T51163QI-HCE6000
Categories RAM
Manufacturer Samsung
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K4T51163QI-HCE6000 CAD Model

Description

The component has a density of 512 Mb and a maximum frequency of 667 MHz.

  • Density: 512 Mb
  • Maximum Frequency: 667 MHz
  • Mount: Surface Mount
  • Case/Package: FBGA
  • Manufacturer: Samsung
  • Win Source Part Number: 1231118-K4T51163QI-HCE6000
  • Status: Cross-Reference Alternative Part
  • RoHS Compliant: Yes
  • Supply and Demand Status: Limited
  • Nominal Supply Current: 115 mA
  • Address Bus Width: 15-bit

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