The Samsung K4T51083QJ-HCE6 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component with a capacity of 512Mb. It is organized as 64M x 8, suited for a range of computing applications. The HCE6 specifies its speed and timing characteristics.

Applications

• Desktop and laptop computers
• Networking equipment
• Embedded systems
• Graphics cards

Features

• DDR3 technology
• Capacity: 512Mb (64M x 8)
• Data transfer rates (dependent on the HCE6 speed grade)
• 8-bit prefetch architecture
• Double data rate architecture: two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Command Address entry mask (CKE)
• On-chip termination (ODT)
• Write leveling
• Lead-free and RoHS compliant

Benefits

• Provides memory for diverse computing needs.
• Supports multitasking and efficient data processing.
• Enhanced system responsiveness.

Additional Details

The K4T51083QJ-HCE6 operates at a voltage of 1.5V. DDR3 SDRAM provides improvements over previous DDR generations, including higher bandwidth and lower power consumption. Key features include on-die termination (ODT) and write leveling, contributing to signal integrity and reliability. Speed specifications are tied to the HCE6 designation and require datasheet review for details.