The K4T1G164QJ-BCF7 is a 1Gb DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It is designed for applications demanding high memory bandwidth and low latency, such as graphics cards, high-performance computing, and advanced embedded systems.

Applications:

• Graphics cards
• High-performance computing
• Advanced embedded systems
• Gaming consoles
• Networking equipment
• Digital TVs

Features:

• 1Gb (64M x 16) memory organization
• DDR2 interface providing double data rate operation for high bandwidth
• Data transfer rates up to 800 Mbps
• Operating voltage: 1.8V
• 4 internal banks for concurrent operation
• Write latency of 0 or 1 clock cycles
• 4n prefetch architecture
• On-Die Termination (ODT) for improved signal integrity
• Lead-free and RoHS compliant

Benefits:

• High memory bandwidth for demanding applications
• Low operating voltage reduces power consumption
• Improved system performance with 4 internal banks enabling concurrent operation
• Simplified system design using ODT
• Environmentally friendly with lead-free and RoHS compliance

Additional Details:

The K4T1G164QJ-BCF7 employs a 4n prefetch architecture to enable high-speed data access. The On-Die Termination (ODT) feature minimizes signal reflections and optimizes signal integrity, particularly at higher data rates. It operates at a voltage of 1.8V, which contributes to reduced power consumption and heat dissipation. It is designed with four internal banks that allow for concurrent operations, enhancing memory throughput and system responsiveness. The x16 configuration indicates the data width.

The K4T1G164QJ-BCF7 adheres to RoHS and lead-free standards, aligning with environmental compliance initiatives. It is packaged in a FBGA (Fine-pitch Ball Grid Array) configuration facilitating easy integration into PCB layouts.