The Samsung K4S561632H-TC75 is a Synchronous DRAM (SDRAM) memory chip designed for applications requiring a balance of performance and capacity. This type of memory is crucial for systems that need fast and reliable data access.
Applications
- Graphics Cards (Entry-Level)
- Embedded Systems
- Networking Equipment
- Older Generation PCs
- Industrial Control Systems
Features
- Density: 256Mb (Megabits)
- Organization: 8M x 16 x 2 banks
- Interface: SDRAM (Synchronous Dynamic Random-Access Memory)
- Speed Grade: TC75 (Indicates a specific clock speed and timing; Refer to datasheet for precise specifications - likely around 133MHz)
- Voltage: Typically 3.3V
- Package: TSOP (Thin Small Outline Package)
- Refresh: Standard SDRAM refresh protocols
Benefits
- High-Speed Data Transfer: SDRAM technology enables fast and synchronous data transfer, improving system responsiveness.
- Reduced Latency: Synchronous operation minimizes latency, allowing for quick memory access.
- Cost-Effective: Provides a balance of performance and cost, making it suitable for a wide range of applications.
- Easy Integration: Standard SDRAM interface allows for straightforward integration into existing systems.
- Reliable Performance: Designed for stable and dependable operation.
The K4S561632H-TC75 offers a 256Mb capacity, suitable for applications with moderate memory requirements. The organization (8M x 16 x 2 banks) facilitates efficient data management. The 'TC75' designation indicates the speed grade and timing characteristics. Always consult the official Samsung datasheet for complete and accurate specifications including timing diagrams, operating conditions, and recommended PCB layout guidelines. Proper power supply decoupling and signal termination are essential for ensuring stable and reliable operation within the intended application.