The K4H560438N-LCB3 is a 512Mbit DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. This memory chip is designed for applications demanding high-speed data transfer and a mid-range memory capacity.

Applications

• Graphics Cards: Employed as memory for storing textures and frame buffers, particularly in entry-level to mid-range graphics cards.
• Gaming Consoles: Integrated into older generation consoles or used for specific memory functions.
• Networking Equipment: Found in routers and switches for efficient packet handling and storage.
• Embedded Systems: Suited for applications requiring rapid memory access within embedded environments.
• Industrial Control Systems: Utilized in systems requiring quick and reliable data processing and storage.

Features

• 512Mbit Density: Provides a balance between memory capacity and cost-effectiveness.
• DDR Interface: Facilitates high-speed data transfer, boosting overall system performance.
• Double Data Rate: Transfers data on both the rising and falling edges of the clock signal, doubling data throughput.
• Operating Frequency: Operates at high frequencies, ensuring fast memory access and processing.
• Low Power Consumption: Engineered for efficient energy use, reducing overall system power requirements.
• JEDEC Standard: Adheres to JEDEC standards, guaranteeing compatibility and reliability.

Benefits

• Enhanced System Performance: High data transfer rates lead to quicker response times and improved overall performance.
• Optimized Memory Capacity: Delivers sufficient memory for a variety of applications without excessive overhead.
• Reduced Power Usage: Low power consumption contributes to longer battery life in portable devices and reduced energy costs in larger systems.
• Stable and Reliable Operation: High-quality manufacturing ensures consistent and dependable performance.
• Cost-Efficient Memory Solution: Provides an optimal balance between performance and cost, making it suitable for a wide range of applications.

Additional Details

The K4H560438N-LCB3 typically operates at a voltage of 2.5V. The LCB3 suffix likely specifies particular packaging characteristics and speed grade. It includes standard DDR SDRAM features such as auto-refresh and power-saving modes, enhancing its suitability for various applications.

For detailed specifications, timing parameters, and electrical characteristics, please refer to the official Samsung datasheet for the K4H560438N-LCB3 DDR SDRAM.