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K4H510838G-HCB3

Part No K4H510838G-HCB3
Manufacturer Samsung
Catalog DDR
Description DDR-333 64Mx8 Pb-Free BGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944257-K4H510838G-HCB3
Series *
Ultra Librarian 3D Model Ultra Librarian K4H510838G-HCB3 CAD Model

Description

The Samsung K4H510838G-HCB3 is a 512Mb DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) component. It is designed for high-performance memory applications requiring substantial bandwidth and low latency. This memory chip is commonly used in graphics cards, computing devices, and other high-speed data processing systems.

Applications

  • Graphics Cards: Used as memory for processing and rendering images.
  • Desktop and Laptop Computers: Functions as main system memory.
  • Gaming Consoles: Supports high-speed data access for game rendering and processing.
  • Networking Devices: Employed in routers and switches for packet buffering and processing.
  • Industrial Computing: Utilized in embedded systems requiring high-speed memory.

Features

  • Double Data Rate (DDR): Transfers data on both rising and falling edges of the clock signal, effectively doubling the bandwidth.
  • 512Mb Density: Offers a substantial amount of memory capacity in a single chip.
  • High-Speed Operation: Operates at specific clock frequencies to ensure fast data access and transfer.
  • Low Power Consumption: Designed to minimize power usage, extending battery life in portable devices and reducing overall system power consumption.
  • Standard SDRAM Interface: Compatible with standard DDR SDRAM controllers and interfaces.
  • Advanced Packaging: Uses advanced packaging technology for enhanced thermal performance and reliability.

Benefits

  • Increased Bandwidth: DDR technology doubles the memory bandwidth, enabling faster data transfer rates.
  • Improved System Performance: High-speed memory access reduces latency and improves overall system responsiveness.
  • Enhanced Graphics Capabilities: Supports complex graphics processing and rendering tasks.
  • Reduced Power Consumption: Low power consumption extends battery life and reduces operating costs.
  • Reliable Operation: Designed for high reliability and stability in demanding environments.

Additional Details

The K4H510838G-HCB3 operates at a specific voltage (typically 2.5V) and adheres to JEDEC standards for DDR SDRAM. It includes features such as auto-refresh and power-down modes to further optimize power consumption. The chip is available in various packaging options, including FBGA (Fine-pitch Ball Grid Array), to meet different application requirements. Its robust design ensures stable and reliable operation across a wide range of operating conditions.

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