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K4B4G1646Q-HCK0

Part No K4B4G1646Q-HCK0
Manufacturer Samsung
Catalog DDR
Description DDR3-1600 256Mx16 (4Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940817-K4B4G1646Q-HCK0
Series *
Ultra Librarian 3D Model Ultra Librarian K4B4G1646Q-HCK0 CAD Model

Description

The Samsung K4B4G1646Q-HCK0 is a 4Gb (Gigabit) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip designed for high-performance applications that require substantial memory capacity and efficient data processing. As a product from Samsung, a leading provider of memory solutions, this chip provides reliability and compatibility.

Applications

  • Desktop Computers: Used as main system memory in desktop computers, supporting operating systems, applications, and games.
  • Laptop Computers: Integrated into laptops to enable efficient multitasking, fast data processing, and smooth overall system performance.
  • Servers: Utilized in server systems to support virtual machines, database management, and other server-side applications that require extensive memory.
  • Graphics Cards: Serves as video memory in graphics cards, enhancing high-resolution textures and ensuring fast frame rates in gaming and other graphics-intensive applications.
  • Embedded Systems: Integrated into various embedded systems such as industrial controllers and network devices to provide memory for data storage and processing tasks.

Features

  • Capacity: 4Gb (256M x 16) memory organization.
  • Data Rate: Supports high-speed data transfer rates up to DDR3-1600 (PC3-12800), depending on the specific configuration.
  • Interface: Standard DDR3 interface for broad compatibility across different systems.
  • Operating Voltage: Low operating voltage of 1.5V for reduced power consumption.
  • Clock Frequency: Operates at a clock frequency of up to 800 MHz.
  • Package: Available in a FBGA (Fine-pitch Ball Grid Array) package for efficient surface mounting and effective thermal management.

Benefits

  • High Performance: Enables fast data access and processing, which enhances system-wide performance.
  • Large Capacity: Offers ample memory capacity for demanding applications, supporting seamless multitasking and efficient data handling.
  • Low Power Consumption: Reduces energy consumption, thereby extending battery life in portable devices and lowering operating costs in server environments.
  • Compatibility: Compatible with a wide range of systems and platforms, streamlining integration and deployment.
  • Reliability: Manufactured by Samsung, a trusted name known for producing high-quality and reliable memory components.

Additional Details

The K4B4G1646Q-HCK0 supports common DDR3 features like burst lengths of 8 and burst types of sequential or interleaved. It also incorporates auto refresh and self refresh modes to minimize power usage. Its operating temperature range generally spans from 0°C to +85°C. Specific timings and other characteristics may vary depending on the speed grade and the intended application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8972 $58.7664
29+ $4.0182 $116.5278
45+ $3.8924 $175.1580
62+ $3.7665 $233.5230
80+ $3.6417 $291.3360
107+ $3.2652 $349.3764
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,867 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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