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K4B4G1646E-BMMA

Part No K4B4G1646E-BMMA
Manufacturer Samsung
Catalog DDR
Description DDR3-1866 256Mx16 (4Gb) Ind 1.35V
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940806-K4B4G1646E-BMMA
Series *
Ultra Librarian 3D Model Ultra Librarian K4B4G1646E-BMMA CAD Model

Description

The Samsung K4B4G1646E-BMMA is a 4Gb (Gigabit) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip, designed for high-performance applications that demand significant memory capacity and bandwidth. Manufactured by Samsung, a leader in memory technology, the K4B4G1646E-BMMA ensures reliability and efficient operation.

Applications

  • Desktop Computers: Used as the main system memory in desktop computers, supporting the operating system, software applications, and games.
  • Laptop Computers: Integrated into laptops to provide necessary RAM for smooth multitasking, efficient data processing, and enhanced overall performance.
  • Servers: Utilized in server systems to support virtual machines, database management, and other server-side applications requiring extensive memory resources.
  • Graphics Cards: Serves as video memory in graphics cards, enabling high-resolution textures and fast frame rates in gaming and other graphics-intensive tasks.
  • Embedded Systems: Incorporated into various embedded systems, such as industrial control systems and networking devices, to provide memory for data storage and processing.

Features

  • Capacity: 4Gb (256M x 16) memory organization.
  • Data Rate: Supports high-speed data transfer rates up to DDR3-1600 (PC3-12800), depending on the specific configuration.
  • Interface: Standard DDR3 interface for compatibility with a wide range of systems.
  • Operating Voltage: Low operating voltage (typically 1.5V) for reduced power consumption.
  • Clock Frequency: Operates at a clock frequency of up to 800 MHz.
  • Package: Available in a FBGA (Fine-pitch Ball Grid Array) package for compact size and efficient heat dissipation.

Benefits

  • High Performance: Facilitates high-speed data access and processing, thereby improving overall system performance.
  • Large Capacity: Offers ample memory capacity for demanding applications, supporting seamless multitasking and efficient data management.
  • Low Power Consumption: Reduces energy consumption, contributing to extended battery life in portable devices and lower operating costs in server environments.
  • Compatibility: Compatible with a wide array of systems and platforms, simplifying integration and deployment processes.
  • Reliability: Manufactured by Samsung, ensuring high-quality and dependable memory solutions.

Additional Details

The K4B4G1646E-BMMA supports key DDR3 features, including burst lengths of 8 and burst types of sequential or interleaved. It also integrates auto refresh and self refresh modes for effective power saving. The operating temperature range is generally between 0°C and +85°C. Specific timings and other detailed specifications may vary based on the speed grade and the intended application.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.6866 $53.0598
7+ $16.5672 $115.9704
10+ $16.0075 $160.0750
14+ $14.8881 $208.4334
18+ $14.3284 $257.9112
22+ $13.7687 $302.9114
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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