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K4B2G0846D-HCH90S3

Part No K4B2G0846D-HCH90S3
Manufacturer Samsung
Catalog DDR
Description DDR3-1333 256Mx8 (2Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941212-K4B2G0846D-HCH90S3
Series *
Ultra Librarian 3D Model Ultra Librarian K4B2G0846D-HCH90S3 CAD Model

Description

The Samsung K4B2G0846D-HCH90S3 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component designed for high-performance and power-efficient operation. Manufactured by Samsung, a leader in memory technology, this chip is engineered to meet the demanding needs of modern computing applications, offering a blend of speed, capacity, and reliability.

Applications:

  • Desktop PCs: Serves as main system memory to improve performance in various applications, from basic tasks to demanding software.
  • Laptops: Integrated to provide efficient memory handling, enabling smooth multitasking and application performance while conserving battery life.
  • Gaming Consoles: Used to support high-resolution graphics and complex game logic, ensuring a seamless gaming experience.
  • Networking Devices: Employed in routers, switches, and other networking equipment to manage data traffic effectively and enhance network performance.
  • Embedded Systems: Integrated into embedded systems requiring high-speed and reliable memory, such as industrial control systems and automotive electronics.

Features:

  • High-Speed Data Transfer: Provides rapid data transfer rates, significantly improving system responsiveness and application loading times.
  • Low Voltage Operation: Operates at a reduced voltage, minimizing power consumption and heat generation, thus contributing to energy efficiency.
  • Double Data Rate (DDR) Technology: Utilizes DDR technology to transfer data on both rising and falling edges of the clock signal, doubling the effective data transfer rate.
  • High Density: Offers a large memory capacity in a compact form factor, maximizing space utilization and enabling higher performance in smaller devices.
  • Advanced Packaging: Employs advanced packaging techniques to ensure signal integrity, thermal management, and overall reliability.

Benefits:

  • Improved System Performance: Significantly enhances the speed and responsiveness of computer systems, leading to faster application execution and smoother multitasking.
  • Increased Multitasking Capability: Allows users to run multiple applications simultaneously without experiencing significant performance degradation.
  • Enhanced Gaming Experience: Delivers smoother gameplay, faster loading times, and improved graphics rendering for a more immersive gaming experience.
  • Stable System Operation: Ensures reliable performance and reduces the risk of system crashes and data loss, enhancing overall system stability.
  • Extended Battery Life: Contributes to longer battery life in portable devices such as laptops and tablets by minimizing power consumption.

Additional Details:

The K4B2G0846D-HCH90S3 complies with the JEDEC standards for DDR3 SDRAM. Detailed technical specifications, including operating frequency, timings, and voltage requirements, can be found in the official Samsung datasheet for this part number. This memory chip is manufactured using high-quality materials and undergoes rigorous testing to ensure optimal performance and reliability under various operating conditions.

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