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SP8U36GETB1

Part No SP8U36GETB1
Manufacturer Rohm Semiconductor
Catalog HOT - SALES and EOL Components (S)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 338004-SP8U36GETB1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8U36GETB1 CAD Model

Description

The SP8U36GETB1 is a power MOSFET from Rohm Semiconductor, optimized for high-efficiency power switching applications. It's engineered to deliver low on-resistance and fast switching characteristics, making it suitable for a variety of power management circuits. This MOSFET is designed to contribute to compact and energy-efficient electronic systems.

Applications:

  • DC-DC converters: Efficiently converting voltage levels in electronic devices.
  • Load switches: Controlling power distribution to different components or subsystems.
  • Power supplies: Providing regulated power for various electronic equipment.
  • Motor control: Driving small to medium-sized motors with optimized power delivery.
  • Battery management systems (BMS): Controlling charging and discharging in battery-powered devices.

Features:

  • Low on-resistance (RDS(on)): Minimizes conduction losses, improving efficiency.
  • High-speed switching: Reduces switching losses, enabling higher operating frequencies.
  • Compact surface-mount package: Enables dense circuit board layouts.
  • Logic-level drive: Compatible with logic-level control signals, simplifying driver circuitry.
  • Optimized gate charge: Reduces switching losses and improves efficiency.

Benefits:

  • Enhanced energy efficiency: Reduces power consumption and heat generation.
  • Smaller form factor: Enables miniaturization of electronic devices.
  • Simplified design: Logic-level drive reduces component count and simplifies circuit design.
  • Improved thermal performance: Efficient heat dissipation ensures reliable operation.
  • Increased system reliability: Robust design and optimized parameters ensure stable performance.

Additional Details:

The SP8U36GETB1 typically features a trench MOSFET structure, contributing to its low on-resistance and fast switching speeds. Refer to the device datasheet for specific electrical characteristics, including drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and power dissipation. Proper thermal management is essential for maximizing performance and reliability. The surface-mount package allows for automated assembly, reducing manufacturing costs and improving production efficiency.

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