The RSJ400N10 is an N-channel power MOSFET from Rohm Semiconductor. It is designed for high-efficiency switching applications. This MOSFET features a low on-resistance, which helps to minimize power loss and improve overall efficiency. The device is available in a surface-mount package, making it suitable for automated assembly processes and compact designs.

Applications

• DC-DC converters
• Motor control
• Power inverters
• Load switches
• Synchronous rectification

Features

• Low on-resistance
• High avalanche energy
• Surface-mount package
• Fast switching speed
• RoHS compliant

Benefits

• Improved power efficiency
• Reduced heat dissipation
• Reliable performance
• Easy to integrate into automated assembly
• Environmentally friendly

Additional Details

The RSJ400N10 has a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating of 40A. The typical on-resistance (RDS(on)) is low, minimizing conduction losses. The gate threshold voltage is specified within a defined range for consistent performance. The device is typically available in a TO-252 package. Its high avalanche energy capability ensures robustness against inductive load switching. The operating temperature range typically spans from -55°C to +175°C.