The Rohm Semiconductor BR25G1MF-3GE2 is a 1Mb (128K x 8) non-volatile EEPROM memory chip with a 10MHz clock frequency. It operates @ an operating supply voltage range of 1.8V to 5.5V and has a write cycle time of 5ms. It is packaged in a 8-SOIC (0.173", 4.40mm Width) package and mounted using SMD technology. The memory interface is SPI. The manufacturer's homepage is www.rohm.com and it has alternative parts (cross-reference) such as M95M01-DWMN3TP/K, CAT25M01VE-GT3, and M95M01-RMN3TP/A. The estimated EOL date is 2023 and it is classified as EAR99.

• Memory: 1Mb (128K x 8) non-volatile EEPROM memory chip
• Clock Frequency: 10MHz
• Operating Supply Voltage Range: 1.8V to 5.5V
• Write Cycle Time: 5ms
• Package: 8-SOIC (0.173", 4.40mm Width)
• Mounting: SMD technology
• Memory Interface: SPI
• Manufacturer's Homepage: www.rohm.com
• Alternative Parts (Cross-Reference): M95M01-DWMN3TP/K, CAT25M01VE-GT3, and M95M01-RMN3TP/A
• Estimated EOL Date: 2023
• Classification: EAR99