The 2SD1664-Q is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for high-current switching and amplification applications.

Applications

• High-current switching circuits
• Motor control circuits
• DC-DC converters
• Relay driving circuits
• Power amplifier stages

Features

• High Collector Current: Capable of handling a collector current (Ic) of up to 3A.
• Low Saturation Voltage: Offers a low collector-emitter saturation voltage (VCE(sat)) which minimizes power loss during switching.
• High hFE: Exhibits a high DC current gain (hFE), enabling efficient amplification.
• Fast Switching Speed: Provides fast switching speeds, suitable for high-frequency applications.
• Epitaxial Planar Construction: Ensures high reliability and performance.

Benefits

• Efficient Switching: The low saturation voltage ensures efficient switching operation, minimizing power dissipation and improving overall system efficiency.
• High Current Handling Capability: The 3A collector current rating makes it suitable for driving high-current loads such as motors and relays.
• Simplified Circuit Design: The high hFE allows for simpler circuit designs with fewer components.
• Reliable Performance: The epitaxial planar construction ensures stable and reliable performance over a wide range of operating conditions.
• Compact Design: Allows for use in space-constrained applications.

Technical Specifications

Collector-Emitter Voltage (VCEO): 60V

Collector-Base Voltage (VCBO): 70V

Emitter-Base Voltage (VEBO): 7V

Collector Current (IC): 3A

Collector Power Dissipation (PC): 10W

DC Current Gain (hFE): Typically 100-320 (at IC = 1A, VCE = 2V)

Operating Junction Temperature (Tj): 150°C

Storage Temperature (Tstg): -55°C to +150°C

The 2SD1664-Q is available in a through-hole package, which facilitates easy mounting on PCBs.