The TGA2508-XCC2SM from RF Micro Devices is a high-power X-band amplifier designed for radar and communication systems. This MMIC (Monolithic Microwave Integrated Circuit) amplifier operates from 8.5 to 10.5 GHz and delivers high output power with excellent power added efficiency.

Applications:

• X-band radar systems
• Satellite communications
• Point-to-point radio links
• Test and measurement equipment
• Military communications

Features:

• Frequency Range: 8.5 - 10.5 GHz
• Output Power: >40 dBm (10W)
• Power Added Efficiency: >30%
• Small Signal Gain: >25 dB
• Bias: Vd = 8V, Idq = 1.6A
• Technology: 0.25um GaN on SiC
• Package: 24 Lead 5x5 mm QFN

Benefits:

• High output power enables longer range radar and communication links.
• Excellent power added efficiency reduces power consumption and heat dissipation.
• Compact QFN package allows for easy integration into system designs.
• High gain simplifies system design by reducing the number of amplifier stages needed.
• Robust GaN technology ensures high reliability and performance in demanding environments.

Additional Details:

The TGA2508-XCC2SM utilizes a 0.25um GaN on SiC process to achieve high power and efficiency. It is matched to 50 ohms and includes integrated DC blocking capacitors on both RF ports simplifying the system integration. The amplifier is designed for applications where high power, high efficiency, and small size are critical. The TGA2508-XCC2SM is ideally suited for X-band radar systems, providing the necessary power and efficiency for long-range detection and tracking. It can also be used in satellite communication uplinks, boosting the signal power for reliable data transmission. The device operates over a wide temperature range, making it suitable for deployment in harsh environmental conditions. The 24-lead QFN package provides excellent thermal performance and simplifies mounting onto printed circuit boards. The quiescent drain current is typically 1.6A at a drain voltage of 8V. The gate voltage should be adjusted to achieve the desired drain current. Proper heatsinking is required to maintain the device junction temperature within the specified limits.