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UPA2792AGR-E1-AT

Part No UPA2792AGR-E1-AT
Manufacturer Renesas Electronics America
Catalog FETs - Arrays
Description POWER, 10A, 30V, N-CH MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A
Rds On (Max) @ Id, Vgs 12.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V
Power - Max 2W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP
Base Product Number UPA2792
Standard Package 2,500 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 841555-UPA2792AGR-E1-AT
Ultra Librarian 3D Model Ultra Librarian UPA2792AGR-E1-AT CAD Model

Description

The 841555-UPA2792AGR-E1-AT is a MOSFET array from Renesas Electronics America.

  • Application: discrete semiconductor applications, specifically as a logic level gate MOSFET
  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 10A @ 25°C
  • On-resistance (Rds On): 12.5mOhm @ 5A and 10V gate-source voltage
  • Configuration: N and P-channel
  • Package: surface mount 8-PowerSOIC package
  • Gate charge (Qg): 42nC @ 10V
  • Input capacitance (Ciss): 2200pF @ 10V drain-source voltage
  • Operating temperature: up to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.5791 $62.8955
12+ $10.3211 $123.8532
18+ $9.9988 $179.9784
24+ $9.6766 $232.2384
31+ $9.3532 $289.9492
42+ $8.3865 $352.2330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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