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RJH60D0DPK-00#TO

Part No RJH60D0DPK-00#TO
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 14+Rohs
Reference case TO-3P
Manufacturer Renesas Electronics America
Manufacturer Homepage www.renesas.com
Win Source Part Number 741174-RJH60D0DPK-00#TO
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60D0DPK-00#TO CAD Model

Description

The RJH60D0DPK-00#TO is a high-voltage, fast-switching N-channel power MOSFET from Renesas Electronics. This MOSFET is designed for high-efficiency power switching applications. It features a low on-resistance, which minimizes power loss and improves overall system efficiency. The device is RoHS compliant and available in a TO-252 package.

Applications:

  • Power Supplies
  • Motor Control
  • DC-DC Converters
  • Inverters
  • Lighting Ballasts

Features:

  • High-Speed Switching: Minimizes switching losses, enhancing efficiency.
  • Low On-Resistance (RDS(on)): Reduces conduction losses, leading to cooler operation and improved efficiency.
  • Avalanche Capability: Offers ruggedness and reliability under transient conditions.
  • RoHS Compliant: Meets environmental standards for hazardous substance reduction.
  • TO-252 Package: Provides ease of mounting and good thermal performance.

Benefits:

  • Improved Efficiency: Low on-resistance and fast switching contribute to higher overall system efficiency.
  • Reduced Heat Dissipation: Lower RDS(on) minimizes heat generation, enabling smaller heat sinks or fanless operation.
  • Enhanced Reliability: Avalanche capability and robust design ensure reliable performance in demanding applications.
  • Simplified Design: Easy to integrate into various power electronic circuits.
  • Environmentally Friendly: RoHS compliance ensures adherence to environmental regulations.

Technical Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Gate-Source Voltage (VGSS): ±30V
  • Drain Current (ID): 6A
  • Operating Temperature Range: -55°C to +150°C
  • On-Resistance (RDS(on)): 1.65 Ohms (typical)
  • Gate Charge (Qg): 7.5 nC (typical)

This MOSFET is suitable for applications requiring high efficiency and reliable switching performance. Its low on-resistance and fast switching characteristics make it a good choice for power supplies, motor control, and other power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6115 $60.0645
54+ $2.1437 $115.7598
84+ $2.0767 $174.4428
115+ $2.0097 $231.1155
149+ $1.9427 $289.4623
199+ $1.7417 $346.5983
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Availability: 4,138 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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