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Same model may have multiple batches, images only for reference.
RJH60D0DPK-00#T0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

RJH60D0DPK-00#T0

Part No RJH60D0DPK-00#T0
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description IGBT 600V 45A 140W TO3P
Datasheet
RJH60D0DPK-00#T0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 45A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 22A
Maximum Power Dissipation 140W
Total Switching Energy(Ets) 230μJ (on), 290μJ (off)
Input Type Standard
Gate Charge 46nC
Turn-on and Turn-off delay time 40ns/80ns
Testing Conditions 300V, 22A, 5 Ohm, 15V
Reverse Recovery Time (trr) 100ns
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1092257-RJH60D0DPK-00#T0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RJH60D0DPK-00#T0 CAD Model

Description

The Renesas Electronics America RJH60D0DPK-00#T0 is a through-hole trench IGBT transistor with a maximum collector current of 45A and maximum collector-emitter breakdown voltage of 600V.

  • Mounting: Through-Hole
  • Technology: Trench IGBT Transistor
  • Maximum Collector Current: 45A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 140W
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V and 22A
  • Reverse Recovery Time: 100ns
  • Gate Charge: 46nC
  • Total Switching Energy (On): 230μJ
  • Total Switching Energy (Off): 290μJ
  • Application: Discrete Semiconductor Products
  • Temperature Range: Up to 150°C
  • Package: TO-3P
  • Packaging: Tube/Rail

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