The R1LV0414DSB-7LI is a high-performance, low-voltage 4-Mbit Static RAM (SRAM) manufactured by Renesas Electronics America. This SRAM is designed for applications requiring fast access times, low power consumption, and high reliability.

Applications

• Portable electronic devices such as mobile phones and PDAs
• Battery-powered equipment
• Memory backup systems
• Data logging applications
• Industrial control systems

Features

• High-speed access time: 70 ns
• Low operating voltage: 3V
• Low power consumption: active and standby modes
• 4,194,304 bits (524,288 words x 8 bits) organization
• TTL-compatible inputs and outputs
• Available in a small outline package (SOP) for space-saving designs
• Wide operating temperature range

Benefits

• Fast data access ensures quick system response times in critical applications.
• Low voltage operation extends battery life in portable devices.
• Reduced power consumption minimizes heat generation and improves overall system efficiency.
• The compact SOP package allows for high-density board designs.
• High reliability ensures data integrity and long-term system stability.
• TTL compatibility allows for easy integration with a wide range of microprocessors and microcontrollers.

Additional Details

The R1LV0414DSB-7LI SRAM utilizes advanced CMOS technology to achieve its high performance and low power consumption. It features separate data input and output lines, simplifying system design and improving data throughput. The device also includes a chip enable (CE) input for device selection and power management. Its wide operating temperature range makes it suitable for use in harsh environments. The typical operating current is quite low, further enhancing its suitability for battery-operated applications.