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R1LP5256ESP-5SR#B0

Part No R1LP5256ESP-5SR#B0
Manufacturer Renesas Electronics America
Catalog RAM
Description IC SRAM 256KBIT PARALLEL 28SOP / SRAM Memory IC 256Kb (32K x 8) Parallel 55 ns 28-SOP
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs)>Memory
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM
Memory Size 256Kb (32K x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Access Time 55 ns
Voltage - Supply 4.5V ~ 5.5V
Temperature Range - Operating 0°C ~ 70°C (TA)
Mounting SMD (SMT)
Package / Case 28-SOIC (0.330", 8.40mm Width)
Supplier Device Package 28-SOP
ECCN EAR99
HTSUS 8542.32.0041
Other Names RENRNSR1LP5256ESP-5SR#B0,2156-R1LP5256ESP-5SR#B0-RE
Standard Package 1
Win Source Part Number 1195172-R1LP5256ESP-5SR#B0
Ultra Librarian 3D Model Ultra Librarian R1LP5256ESP-5SR#B0 CAD Model

Description

The R1LP5256ESP-5SR#B0, manufactured by Renesas Electronics America, is a low-power SRAM (Static Random-Access Memory) device. This type of memory is known for its fast access times and is commonly used in applications where quick data retrieval is crucial.

Applications:

  • Cache memory: Used in processors and controllers to store frequently accessed data for faster retrieval.
  • Buffer memory: Provides temporary storage for data in communication and data processing systems.
  • Data logging: Stores data in embedded systems for monitoring and analysis.
  • Industrial control systems: Used in programmable logic controllers (PLCs) and other industrial automation equipment.
  • Medical devices: Utilized in portable medical devices for storing patient data and configuration settings.
  • Networking Equipment: Provides storage within networking hardware such as routers and switches.

Features:

  • High-speed access: Offers a typical access time of 5ns, enabling fast data retrieval.
  • Low power consumption: Designed for energy-efficient operation, suitable for battery-powered applications.
  • 256Kbit (32K x 8) memory organization: Provides a storage capacity of 256 kilobits, organized as 32,768 words of 8 bits each.
  • Wide voltage range: Operates from a wide voltage range, typically 2.7V to 3.6V.
  • TTL-compatible inputs and outputs: Interfaces easily with standard TTL logic circuits.
  • Surface-mount package: Available in a surface-mount package for easy integration into printed circuit boards.
  • Operating temperature range: Typically specified for industrial temperature range.

Benefits:

  • Fast data access: Enables quick data retrieval, improving system performance.
  • Low power consumption: Extends battery life in portable applications.
  • Large storage capacity: Provides sufficient storage for a variety of applications.
  • Easy integration: Available in a surface-mount package for easy integration into printed circuit boards.
  • Reliable operation: Offers reliable operation over a wide temperature range.

The R1LP5256ESP-5SR#B0 stores data using static memory cells, which retain data as long as power is supplied. Its 5ns access time ensures that data can be read or written quickly, making it suitable for high-performance applications. The low power consumption is achieved through careful circuit design and process technology. The device is commonly used in embedded systems, where fast data access and low power consumption are critical requirements. Its wide voltage range allows it to operate with different power supply voltages, providing design flexibility.

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