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Same model may have multiple batches, images only for reference.
R1LP0408DSB-7SI#S0 Renesas Electronics America
Same model may have multiple batches, images only for reference.

R1LP0408DSB-7SI#S0

Part No R1LP0408DSB-7SI#S0
Manufacturer Renesas Electronics America
Catalog Unclassified Memory
Description IC SRAM 4MBIT PARALLEL 32TSOP II / SRAM Memory IC 4Mb (512K x 8) Parallel 70 ns 32-TSOP II
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM
Memory Size 4Mb (512K x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70 ns
Voltage - Supply 4.5V ~ 5.5V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package 32-TSOP II
Other Names 2156-R1LP0408DSB-7SI#S0-RETR,RENRNSR1LP0408DSB-7SI#S0
Standard Package 1,000
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1254205-R1LP0408DSB-7SI#S0
Ultra Librarian 3D Model Ultra Librarian R1LP0408DSB-7SI#S0 CAD Model

Description

The Renesas Electronics America Inc 1254205-R1LP0408DSB-7SI#S0 is a Volatile SRAM with a memory size of 4Mb (512K x 8).

  • Memory Size: 4Mb (512K x 8)
  • Access Time: 70 ns
  • Voltage Range: 4.5V to 5.5V
  • Package/Case Size: 32-SOIC (0.400", 10.16mm Width)
  • Memory Interface: Parallel
  • Write Cycle Time: 70ns
  • ECCN: 3A991B2A

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