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Same model may have multiple batches, images only for reference.
NP90N06VDK-E1-AY Real Image
Same model may have multiple batches, images only for reference.

NP90N06VDK-E1-AY

Part No NP90N06VDK-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description POWER TRANSISTOR N-CH AUTO POWER / N-Channel 60 V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252 (MP-3ZP)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Renesas Electronics America Inc
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Power Dissipation (Max) 1.2W (Ta), 147W (Tc)
Temperature Range - Operating 175°C
Mounting SMD (SMT)
Supplier Device Package TO-252 (MP-3ZP)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 559-NP90N06VDK-E1-AYDKR,559-NP90N06VDK-E1-AYCT,559-NP90N06VDK-E1-AYTR,-1161-NP90N06VDK-E1-AYCT
Standard Package 2,500
Win Source Part Number 992770-NP90N06VDK-E1-AY
Ultra Librarian 3D Model Ultra Librarian NP90N06VDK-E1-AY CAD Model

Description

The NP90N06VDK-E1-AY from Renesas Electronics America Inc is an N-Channel MOSFET transistor.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 90A @ 25°C
  • Power Dissipation: 1.2W (Ta), 147W (Tc)
  • Gate Charge: 95 nC @ 10V
  • Temperature Range: 175°C
  • RoHS Compliant: Yes

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