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2SK4069-ZK-E1

Part No 2SK4069-ZK-E1
Manufacturer Renesas Electronics America
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12+
Reference case TO-252
Manufacturer Renesas Electronics America
Manufacturer Homepage www.renesas.com
Win Source Part Number 713089-2SK4069-ZK-E1
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK4069-ZK-E1 CAD Model

Description

The 2SK4069-ZK-E1 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics. This transistor is designed for power management applications, specifically load switching and DC-DC conversion.

Applications:

  • Load Switching
  • DC-DC Converters
  • Power Management Circuits in portable devices
  • Battery Management Systems
  • Power Supplies

Features:

  • Low On-Resistance (RDS(on))
  • Low Gate Charge (Qg)
  • Logic Level Drive
  • Surface Mount Package
  • RoHS Compliant

Benefits:

  • Improved Efficiency in Power Switching Applications
  • Reduced Power Loss
  • Directly Driven by Microcontrollers
  • Space Saving Design
  • Environmentally Friendly

The 2SK4069-ZK-E1’s key feature is its low on-resistance, which minimizes power loss during switching, resulting in higher efficiency in power management circuits. The low gate charge contributes to faster switching speeds and reduced driver power requirements. Its logic level drive capability allows it to be directly driven by microcontrollers, simplifying circuit design and reducing component count. The surface mount package enables space-saving designs, making it suitable for portable devices. The device is RoHS compliant, ensuring that it meets environmental regulations.

This MOSFET is particularly well-suited for battery-powered applications where efficiency and space are critical considerations. Its low on-resistance helps to extend battery life, while its small size allows it to be integrated into compact designs. The 2SK4069-ZK-E1 is a reliable and efficient solution for a wide range of power management applications.

Specifications:

  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGSS): ±20V
  • Drain Current (ID): -4A
  • On-Resistance (RDS(on)): 0.068 Ohms (at VGS = -4.5V)

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