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Same model may have multiple batches, images only for reference.
2SC1213C-E Renesas Electronics America
Same model may have multiple batches, images only for reference.

2SC1213C-E

Part No 2SC1213C-E
Manufacturer Renesas Electronics America
Catalog Transistors (BJT) - Single
Description TRANS NPN 35V 0.5A TO92 / Bipolar (BJT) Transistor NPN 35 V 500 mA 400 mW Through Hole TO-92
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Renesas Electronics America Inc
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 35 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 3V
Power - Max 400 mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Names RENRNS2SC1213C-E,2156-2SC1213C-E
Standard Package 1
Win Source Part Number 1190610-2SC1213C-E
Ultra Librarian 3D Model Ultra Librarian 2SC1213C-E CAD Model

Description

The Renesas Electronics America Inc 2SC1213C-E is an NPN bipolar transistor that is designed for use in discrete semiconductor products.

  • Type: NPN Bipolar Transistor
  • Maximum Power: 400mW
  • Maximum Voltage: 35V
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • RoHS Compliant: Yes
  • Current Cutoff: 500nA

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