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PM39LV020-70JCE

Part No PM39LV020-70JCE
Manufacturer PMC-Sierra
Catalog HOT - SALES and EOL Components (N - P)
Description 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
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Manufacturer PMC-Sierra
Win Source Part Number 277731-PM39LV020-70JCE
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PM39LV020-70JCE CAD Model

Description

The PM39LV020-70JCE is a 2 Megabit Low Voltage Flash memory device manufactured by PMC-Sierra. It is organized as 256K x 8 bits. This memory is designed for applications requiring a larger non-volatile storage capacity with low power consumption and enhanced endurance.

Applications

  • Battery-powered devices with larger storage needs
  • Embedded systems
  • Data logging requiring significant memory
  • Firmware storage for complex systems
  • Handheld devices
  • IoT (Internet of Things) devices

Features

  • 2 Megabit (256K x 8) Flash Memory
  • Fast access time: 70ns
  • Single 3.3V power supply
  • Sector Erase Architecture
  • Automatic Program and Erase algorithms
  • Low power consumption
  • CMOS process
  • Enhanced Endurance
  • JEDEC standard package

Benefits

  • Fast read access enables quick data retrieval, improving system performance.
  • Sector erase capability allows for flexible memory management and efficient data updates.
  • Low power consumption extends battery life in portable applications.
  • Automatic program and erase algorithms simplify memory operations and reduce software overhead.
  • The single 3.3V power supply is ideal for low voltage systems.
  • Enhanced endurance ensures long-term reliability in demanding applications with frequent write cycles.

Additional Details

The PM39LV020-70JCE provides a larger storage capacity compared to the PM39LV010 series, while maintaining low power consumption and enhanced endurance. Its sector erase architecture, combined with fast access times, makes it suitable for applications that require frequent data updates. The 70ns access time ensures quick retrieval of stored data. Its 3.3V operation voltage is optimized for low-power systems, increasing battery life. The automatic program and erase algorithms simplify software development. The enhanced endurance feature ensures that the memory can withstand a significant number of write/erase cycles, making it suitable for demanding applications. The 2 Megabit density allows for storing more complex firmware or larger amounts of data.

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