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SGH15N60RUFTU

Part No SGH15N60RUFTU
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 24 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 15A
Power - Max 160 W
Switching Energy 320µJ (on), 356µJ (off)
Input Type Standard
Gate Charge 42 nC
Td (on/off) @ 25°C 17ns/44ns
Test Condition 300V, 15A, 13Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Base Product Number SGH15
Standard Package 450
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277408-SGH15N60RUFTU
Ultra Librarian 3D Model Ultra Librarian SGH15N60RUFTU CAD Model

Description

ON Semiconductor SGH15N60RUFTU IGBT

The ON Semiconductor SGH15N60RUFTU is a high-performance insulated-gate bipolar transistor (IGBT) designed for a wide range of applications requiring efficient and robust power conversion and control. This IGBT is part of ON Semiconductor's advanced energy-efficient and reliable power management solutions. It is particularly well-suited for applications such as motor drives, uninterruptible power supplies (UPS), inverters, and switching power supplies.

The SGH15N60RUFTU is built using ON Semiconductor's proprietary trench gate field-stop technology, which provides superior performance in terms of switching speed and energy efficiency. This technology allows for reduced conduction and switching losses, making the device an excellent choice for high-frequency operations. The IGBT features a collector-emitter breakdown voltage (Vce) of 600V, which ensures reliable operation even under high voltage conditions.

With a continuous collector current (Ic) rating of 15A at 25°C, this IGBT can handle significant power levels, making it suitable for demanding applications. The device also offers a low collector-emitter saturation voltage (Vce(sat)), which minimizes power dissipation and enhances overall system efficiency.

The SGH15N60RUFTU comes in a TO-3P package, which provides excellent thermal performance and is easy to mount in various circuit configurations. The package is designed to handle high thermal and electrical loads, ensuring the IGBT's longevity and reliability.

Additional features of the SGH15N60RUFTU include a co-packaged freewheeling diode, which provides fast recovery and reduces electromagnetic interference (EMI). This integrated diode is optimized for the IGBT's switching characteristics, further improving the efficiency of the overall system.

ON Semiconductor is known for its commitment to environmental sustainability, and the SGH15N60RUFTU is no exception. It is RoHS compliant, ensuring that it meets the latest environmental standards and regulations.

In summary, the ON Semiconductor SGH15N60RUFTU IGBT offers an excellent balance of power capacity, efficiency, and reliability, making it an ideal choice for designers looking to optimize their power management systems.

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