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NTMFD4C88NT1G

Part No NTMFD4C88NT1G
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 8DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 11.7A, 14.2A
Rds On (Max) @ Id, Vgs 5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1252pF @ 15V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6)
Base Product Number NTMFD4
Standard Package 1,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649860-NTMFD4C88NT1G
Ultra Librarian 3D Model Ultra Librarian NTMFD4C88NT1G CAD Model

Description

Product Overview: NTMFD4C88NT1G by ON Semiconductor

The NTMFD4C88NT1G is a state-of-the-art Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance, dual N-channel device is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management solutions across a broad range of applications.

Constructed with advanced PowerTrench® technology, the NTMFD4C88NT1G offers an optimal balance of low on-resistance and reduced gate charge, leading to higher efficiency and faster switching performance. The device is housed in a compact, surface-mountable DFN8 package, which ensures a minimal footprint on the PCB while also providing excellent thermal performance.

With a continuous drain current (ID) of 30A and a drain-source voltage (VDS) of 30V, this MOSFET is capable of handling high current flows while maintaining a low voltage drop across the device. The low threshold voltage (VGS(th)) allows for easy drive capability, making it suitable for a wide range of power applications, including DC-DC converters, motor drives, and power management systems.

The NTMFD4C88NT1G also features robust protection against hazardous events. It is equipped with a built-in diode that provides a fast recovery time, which is critical for protecting the device from voltage transients. Additionally, its maximum junction temperature of 150°C enables the MOSFET to operate reliably in high-temperature environments.

ON Semiconductor's commitment to environmental sustainability is evident in the NTMFD4C88NT1G, as it is compliant with RoHS regulations, ensuring that no hazardous substances are used in its manufacturing. This commitment to the environment does not come at the expense of performance, making the NTMFD4C88NT1G an ideal choice for designers looking to create eco-friendly yet powerful electronic systems.

In summary, the NTMFD4C88NT1G from ON Semiconductor is a powerful and efficient solution for modern electronics requiring high-speed switching and power management. Its advanced features and compact design make it a versatile component suitable for a variety of challenging applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.7200 $59.8400
52+ $2.2315 $116.0380
81+ $2.1622 $175.1382
111+ $2.0929 $232.3119
143+ $2.0224 $289.2032
192+ $1.8134 $348.1728
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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