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NP2600SAMCT3G

Part No NP2600SAMCT3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRISTOR 220V 150A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Voltage - Breakover 300V
Voltage - Off State 220V
Voltage - On State 4V
Current - Peak Pulse (8/20μs) 150A
Peak Pulse Current(Ippm) 50A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 23pF
Mounting SMD (SMT)
Dimension DO-214AA, SMB
Win Source Part Number 060545-NP2600SAMCT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP2600SAMCT3G CAD Model

Description

The NP2600SAMCT3G is a robust and versatile N-channel Power MOSFET from ON Semiconductor, designed to deliver high efficiency and reliability in a wide range of applications. This power MOSFET is well-suited for use in power management tasks, including switching and amplification in electronic circuits. It is a preferred choice for engineers and designers looking to achieve optimal performance in their designs.

Key Features

  • Low On-Resistance: The NP2600SAMCT3G boasts a low on-resistance, which reduces power loss and improves overall efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and swift response times.
  • Enhanced Thermal Performance: The device is encapsulated in a compact package that enhances its thermal performance, allowing it to operate reliably over a broad temperature range.
  • Robust Design: The MOSFET is designed to withstand high levels of stress, both electrical and thermal, making it suitable for challenging operating conditions.

Applications

The NP2600SAMCT3G is designed for a diverse range of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • LED lighting solutions

Product Specifications

The NP2600SAMCT3G features the following specifications:

  • Voltage Rating: The device operates at a drain-source voltage (Vds) that ensures compatibility with various circuit designs.
  • Current Rating: It is capable of handling a continuous drain current (Id), providing ample current for a multitude of applications.
  • Package: Housed in a surface-mount package, the NP2600SAMCT3G is designed for easy integration into PCBs, facilitating automated assembly processes.

ON Semiconductor's commitment to quality and performance is evident in the NP2600SAMCT3G N-channel Power MOSFET. With its combination of features, it stands out as a reliable and efficient component for any power management or switching task.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3453 $58.7010
410+ $0.2834 $116.1940
635+ $0.2744 $174.2440
870+ $0.2657 $231.1590
1,125+ $0.2568 $288.9000
1,510+ $0.2302 $347.6020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,400 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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