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NHPD660T4G

Part No NHPD660T4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 1 Weeks
Features Diode Standard 600 V 6A Surface Mount DPAK
Manufacturer ON Semiconductor
Package Reel - TR
Speed Fast Recovery =< 500ns, > 200mA (Io)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name NHPD660
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number NHPD660T4GOSCT, NHPD660T4G-ND, NHPD660T4GOSTR, NHPD660T4GOSDKR
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887251-NHPD660T4G
Ultra Librarian 3D Model Ultra Librarian NHPD660T4G CAD Model

Description

The NHPD660T4G from ON Semiconductor is a cutting-edge, high-performance Schottky barrier diode designed for applications requiring fast switching and low voltage drop. This diode is a perfect choice for high-frequency rectification or as a freewheeling diode in power supplies and other power-switching applications.

Key Features:

  • Low Forward Voltage Drop: The NHPD660T4G offers a very low forward voltage drop, which results in reduced power loss and improved efficiency in your application. This feature is particularly beneficial in low voltage operations where power conservation is critical.
  • High Surge Capability: Designed to withstand high surge currents, this diode is ideal for applications that may experience occasional surges, thereby providing reliable protection against voltage spikes.
  • Fast Switching Speed: With its fast switching capability, the NHPD660T4G minimizes switching losses and is suitable for high-frequency rectification. This makes it an excellent choice for modern, fast-switching power supplies.
  • Low Leakage Current: The diode's low leakage current ensures minimal power loss when the diode is in the off state, contributing to the overall efficiency of the device it's used in.
  • High-Temperature Operation: Capable of operating at high temperatures, the NHPD660T4G maintains its performance and reliability even under thermal stress, making it suitable for a wide range of industrial applications.

Applications:

The ON Semiconductor NHPD660T4G is versatile and can be used in various applications, including:

  • DC-DC Converters
  • Power Supply Circuits
  • Automotive Applications
  • Free-Wheeling Diodes in Power Inverters
  • Voltage Clamping
  • Protection Circuits

Package and Quality:

The NHPD660T4G is offered in a Pb-free, Halogen-free/BFR-free and RoHS compliant package, ensuring environmental friendliness and compliance with the most stringent regulations. The device is housed in a compact SMC package, which is optimized for automated assembly processes and provides excellent power dissipation characteristics.

With its robust design and superior electrical characteristics, the ON Semiconductor NHPD660T4G Schottky barrier diode is an excellent choice for designers looking for a reliable and efficient component for their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1220 $61.7100
130+ $0.9207 $119.6910
195+ $0.8919 $173.9205
270+ $0.8632 $233.0640
350+ $0.8344 $292.0400
465+ $0.7481 $347.8665
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,990 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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