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NGTB15N120IHRWG

Part No NGTB15N120IHRWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 15A TO247 / Monolithic Free Wheeling Diode
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 15A
Power - Max 333W
Switching Energy 340μJ (off)
Input Type Standard
Gate Charge 160nC
Td (on/off) at 25°C -/170ns
Test Condition 600V, 15A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 807392-NGTB15N120IHRWG
Ultra Librarian 3D Model Ultra Librarian NGTB15N120IHRWG CAD Model

Description

The NGTB15N120IHRWG is a state-of-the-art insulated gate bipolar transistor (IGBT) developed by ON Semiconductor, a company renowned for its commitment to innovation and excellence in the power semiconductor industry. This IGBT is designed to offer a combination of high efficiency, reliability, and performance for a wide range of power applications.

Key Features

  • High Current Capability: With a continuous collector current rating of 30A and a pulsed collector current of 60A, the NGTB15N120IHRWG is capable of handling high power applications with ease.
  • High Voltage Rating: The device can withstand voltages up to 1200V, making it suitable for various high voltage applications.
  • Low On-State Voltage Drop (Vce(on)): This IGBT features a low on-state voltage drop which enhances its efficiency and reduces thermal losses during operation.
  • Fast Switching Speed: The IGBT offers fast switching characteristics, which is crucial for reducing switching losses and improving overall performance in applications such as inverters and converters.
  • Co-Packaged Free Wheeling Diode: It comes with a co-packaged diode that provides efficient free-wheeling functionality, further enhancing the device's performance in switching applications.
  • Robustness: The NGTB15N120IHRWG is designed to be robust against rugged environmental conditions, ensuring reliability and a long operational life.

Applications

The ON Semiconductor NGTB15N120IHRWG IGBT is ideal for a diverse range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Induction Heating
  • Solar Inverters
  • Power Factor Correction (PFC) Circuits

Package and Quality

The NGTB15N120IHRWG is packaged in a TO-247 package, which is known for its high power dissipation capability. The package ensures that the IGBT can be easily integrated into various circuit designs while providing ample thermal management. Additionally, ON Semiconductor's commitment to quality ensures that each IGBT is rigorously tested to meet stringent industry standards, providing designers with a reliable component for their high-power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8624 $51.7440
145+ $0.7076 $102.6020
220+ $0.6855 $150.8100
305+ $0.6634 $202.3370
390+ $0.6413 $250.1070
525+ $0.5749 $301.8225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,680 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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