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MURS110T3G

Part No MURS110T3G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 100V 2A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 875mV @ 1A
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 35ns
Current - Reverse Leakage @ Vr 2μA @ 100V
Mounting SMD (SMT)
Case / Package SMB
Operating Temperature - Junction -65°C to 175°C
Win Source Part Number 024661-MURS110T3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian MURS110T3G CAD Model

Description

Product Overview: MURS110T3G - ON Semiconductor

The MURS110T3G is a state-of-the-art ultrafast rectifier designed and manufactured by ON Semiconductor, a leader in power and signal management. This high-performance diode is engineered to minimize power loss and heat generation, which is crucial for high-efficiency power supply applications.

With its superior switching speeds and low forward voltage drop, the MURS110T3G is an ideal choice for use in a variety of electronic circuits, including power supplies, converters, and inverters. Its ultrafast recovery time makes it particularly suitable for high-frequency operations, ensuring that efficiency is maintained even under demanding conditions.

Key Features:

  • Reverse Voltage: The device can withstand reverse voltages up to 100 volts, providing a robust solution for most high-voltage applications.
  • Forward Current: It is capable of handling a continuous forward current of 1 ampere, making it suitable for medium-power requirements.
  • Ultrafast Recovery Time: The MURS110T3G boasts an ultrafast recovery time, which reduces switching losses and improves overall efficiency.
  • Low Forward Voltage Drop: The low forward voltage drop feature of this diode minimizes power dissipation and heat generation, contributing to the longevity of the device.
  • High-Temperature Operation: It is designed to operate at junction temperatures ranging from -55°C to +150°C, ensuring reliability across a wide range of environmental conditions.
  • Surface Mount Package: The device comes in a compact SMA (DO-214AC) package, ideal for space-constrained applications and easy integration into surface mount technology (SMT) processes.
  • RoHS Compliant: The MURS110T3G is compliant with the RoHS directive, making it an environmentally friendly choice for electronic equipment manufacturers.

Whether you are designing power management systems for consumer electronics, automotive, or industrial applications, the MURS110T3G from ON Semiconductor offers a combination of performance and reliability that can help enhance your product's efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1490 $50.6600
820+ $0.1222 $100.2040
1,270+ $0.1184 $150.3680
1,750+ $0.1146 $200.5500
2,260+ $0.1108 $250.4080
3,025+ $0.0993 $300.3825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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