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MSD601-RT1G

Part No MSD601-RT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.1A SC59
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Transistor Type NPN
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Vce Saturation (Maximum) at Ib, Ic 500mV at 10mA, 100mA
Current - Collector Cutoff (Maximum) 100nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 210 at 2mA, 10V
Maximum Power 200mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Family Part Number MSD601
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 715456-MSD601-RT1G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MSD601-RT1G CAD Model

Description

ON Semiconductor MSD601-RT1G Product Overview

The ON Semiconductor MSD601-RT1G is a high-performance, N-channel Trench MOSFET designed for a wide range of applications that demand efficiency, reliability, and compactness. This semiconductor device is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to the evolving needs of modern electronics.

With a drain-to-source voltage (Vds) of 60V and a continuous drain current (Id) of 115mA at 25°C, the MSD601-RT1G is capable of handling moderate power levels while maintaining a low on-resistance of just 5 Ohms. This low on-resistance is crucial for applications that require high efficiency, as it minimizes power loss due to resistance in the circuit.

The device comes in a small SOD-123 package, making it an excellent choice for space-constrained applications. Its compact form factor is particularly beneficial in portable electronics, where every millimeter counts. Furthermore, the MSD601-RT1G boasts a fast switching speed, which is essential for applications that require quick response times, such as power supplies and DC-DC converters.

Another notable feature of the MSD601-RT1G is its robust thermal performance. It can operate over a wide temperature range, maintaining stability and reliability even under challenging conditions. This makes it suitable for industrial and automotive applications, where components are often exposed to extreme temperatures.

The device also includes built-in protection features, such as a body diode, which provides reverse current protection and ensures the longevity of the MOSFET. This, combined with its compliance with RoHS and Halogen-Free standards, makes the MSD601-RT1G an environmentally friendly choice for designers looking to create sustainable products.

In summary, the ON Semiconductor MSD601-RT1G N-channel Trench MOSFET is a versatile component that offers a balance of power handling, efficiency, and compactness. Its robust design and protection features make it an ideal choice for a broad range of applications, from consumer electronics to industrial automation and automotive systems.

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