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MMT10B230T3

Part No MMT10B230T3
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRIST TSPD BIDIR 100A 170V SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Circuit Protection - Transient Voltage Suppressors (TVS) - Thyristors
Mfr ON Semiconductor
Package Bulk
Product Status Obsolete
Voltage - Breakover 265V
Voltage - Off State 170V
Current - Peak Pulse (10/1000µs) 100 A
Capacitance 200pF
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package SMB
Base Product Number MMT10B
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.30.0080
Win Source Part Number 642957-MMT10B230T3
Ultra Librarian 3D Model Ultra Librarian MMT10B230T3 CAD Model

Description

ON Semiconductor MMT10B230T3: A Robust Power MOSFET

The MMT10B230T3 is a state-of-the-art power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This product is a testament to the company's commitment to providing high-performance solutions to the power electronics market. The MMT10B230T3 is specifically engineered to address the demanding requirements of high-efficiency power conversion systems.

This power MOSFET is a member of ON Semiconductor's extensive MOSFET portfolio and is built using advanced trench technology which significantly reduces on-resistance while maximizing switching performance. The MMT10B230T3 is optimized for a variety of applications, including DC-DC converters, power supplies, motor drives, and other high-efficiency power management tasks.

Key Features of MMT10B230T3:

  • Low On-Resistance: The device boasts a very low RDS(on), which minimizes conduction losses and enhances overall efficiency.
  • High Current Capacity: With its ability to handle high currents, the MMT10B230T3 is ideal for applications requiring robust power handling capabilities.
  • Fast Switching Speed: Fast switching characteristics ensure minimal switching losses and are critical for high-frequency power conversion applications.
  • High Thermal Performance: The MOSFET is designed to operate reliably in high-temperature environments, thanks to its superior thermal management properties.
  • Low Gate Charge: A low total gate charge (QG) reduces the energy required to turn the MOSFET on and off, which is beneficial for power efficiency.

The MMT10B230T3 also features a rugged and durable construction that is capable of withstanding high-energy pulses in the avalanche and commutation modes. This makes it an excellent choice for applications that may experience unexpected voltage transients.

ON Semiconductor has packaged the MMT10B230T3 in a compact and surface-mountable D2PAK (TO-263), which facilitates easy integration into a variety of circuit designs. The package is designed for optimal electrical and thermal performance, ensuring that the device operates reliably under a wide range of conditions.

In summary, the MMT10B230T3 from ON Semiconductor is a highly efficient, reliable, and robust power MOSFET that is well-suited for high-performance power management applications. Its advanced features and superior design make it a valuable component for engineers looking to improve the efficiency and reliability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4987 $59.8440
285+ $0.4093 $116.6505
440+ $0.3966 $174.5040
605+ $0.3837 $232.1385
780+ $0.3709 $289.3020
1,045+ $0.3326 $347.5670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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