The MBR835 from ON Semiconductor is a robust Schottky rectifier designed for high-efficiency power management applications. This state-of-the-art rectifier is built using Schottky Barrier technology which ensures low forward voltage drop and high switching speeds. The device is well-suited for use in a range of electronic circuits, particularly those requiring a reliable and efficient power rectification solution.
Key Features
- Low Forward Voltage Drop: The MBR835 offers a low forward voltage drop, which reduces power loss and improves efficiency, making it ideal for high-frequency rectification and free-wheeling applications in power supplies and other power switching applications.
- High Surge Capacity: With its excellent surge handling capability, this rectifier can withstand high current peaks without performance degradation, ensuring reliability in demanding situations.
- High Junction Temperature: The device operates effectively at high temperatures, with a maximum junction temperature of 150°C, allowing for use in high-temperature environments.
- Guard Ring Die Construction: The guard ring die construction provides enhanced ruggedness and long-term reliability, which is particularly beneficial in commercial and industrial applications where durability is crucial.
Applications
The MBR835 is versatile and can be used in a variety of applications, including:
- Switching power supplies
- Converters
- Free-wheeling diodes
- Reverse battery protection
- DC-DC converters
- Automotive applications
Specifications
Parameter
Value
Peak Repetitive Reverse Voltage
35 V
Average Rectified Forward Current
8 A
Non-Repetitive Peak Forward Surge Current
150 A
Operating Junction Temperature Range
-65°C to +150°C
Package / Case
TO-220AC
With its combination of high efficiency, thermal performance, and reliability, the MBR835 Schottky Rectifier from ON Semiconductor is an excellent choice for designers looking to enhance the performance of their power management systems.
