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HUF76439S3S

Part No HUF76439S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 75A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 75A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 84nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 2745pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182473-HUF76439S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF76439S3S CAD Model

Description

The ON Semiconductor HUF76439S3S is a high-performance N-Channel Power MOSFET designed for a variety of applications requiring efficient power management and high-speed switching capabilities. This robust semiconductor device is engineered to deliver superior performance in a compact surface-mount package, making it an ideal choice for space-constrained applications.

Key Features

  • High Current Handling: The HUF76439S3S can handle continuous drain currents up to 75A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 8.0 mOhms, this MOSFET ensures minimal power loss and better efficiency in electronic circuits.
  • High-Speed Switching: Designed for fast switching, the device has a low gate charge and reduced Miller capacitance, facilitating quicker response times.
  • Robust Thermal Performance: The MOSFET is encapsulated in a D2PAK (TO-263) package, which provides excellent heat dissipation and thermal management.

Applications

The HUF76439S3S is versatile and can be used in a wide range of applications, including:

  • Power supplies and DC-DC converters
  • Motor drives and controllers
  • Automotive systems and power management
  • Switching regulators and load switches
  • Inverters and battery management systems

Technical Specifications

Parameter Value
Drain-to-Source Voltage (VDS) 60V
Continuous Drain Current (ID) 75A
On-Resistance (RDS(on)) 8.0 mOhms
Power Dissipation (PD) 190W
Operating Temperature Range -55°C to +175°C

With its combination of high current capacity, low on-resistance, and fast switching speed, the ON Semiconductor HUF76439S3S N-Channel Power MOSFET is an excellent choice for designers looking to optimize power efficiency and performance in their electronic designs.

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